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| d a t a sh eet BFS17 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
description npn transistor in a plastic sot23 package. applications a wide range of rf applications such as: C mixers and oscillators in tv tuners C rf communications equipment. pinning pin description 1 base 2 emitter 3 collector fig.1 sot23. marking code: e1p. handbook, halfpage msb003 top view 12 3 quick referenced data limiting values in accordance with the absolute maximum rating system (iec 134). note to the quick reference data and the limiting values 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions typ. max. unit v cbo collector-base voltage open emitter - 25 v v ceo collector-emitter voltage open base - 15 v i c dc collector current - 25 ma p tot total power dissipation up to t s =70 c; note 1 - 300 mw f t transition frequency i c = 25 ma; v ce = 5 v; f = 500 mhz; t j =25 c1 - ghz f noise ?gure i c = 2 ma; v ce =5v; r s =50 w ; f = 500 mhz; t j =25 c 4.5 - db symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 25 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 2.5 v i c dc collector current - 25 ma i cm peak collector current - 50 ma p tot total power dissipation up to t s =70 c; note 1 - 300 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification BFS17 thermal characteristics note 1. t s is the temperature at the soldering point of the collector pin. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point up to t s =70 c; note 1 260 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb =10v -- 10 na h fe dc current gain i c = 2 ma; v ce =1v 25 90 - i c = 25 ma; v ce =1v 25 90 - f t transition frequency i c = 2 ma; v ce = 5 v; f = 500 mhz - 1 - ghz i c = 25 ma; v ce = 5 v; f = 500 mhz - 1.6 - ghz c c collector capacitance i e =i e = 0; v cb = 10 v; f = 1 mhz - 0.8 1.5 pf c e emitter capacitance i c =i c = 0; v eb = 0.5 v; f = 1 mhz -- 2pf c re feedback capacitance i c = 1 ma; v ce = 5 v; f = 1 mhz - 0.65 - pf f noise ?gure i c = 2 ma; v ce =5v; r s =50 w ; f = 500 mhz - 4.5 - db 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification BFS17 |
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